Kang I, Haskard MR, Samaan ND: A study of two-step silicon anisotropic etching for a polygon-shaped microstructure using KOH solution. Sens. Actuators 1997, A62: 646–651. -8 http://dx.doi.org/10.1016/S0924–4247(97)01500
Article
Google Scholar
Jiang Y, Liu G, Zhou J: A novel process for circle-like 3D microstructures by two-step wet etching. J Micromech Microeng 2009, 19015005: 5. 10.1088/0960-1317/19/1/015005
Google Scholar
Kwon JW, Kim ES: Multi-level microfluidic channel routing with protected convex corners. Sens Actuators 2002, A97–98: 729–733. 10.1016/S0924-4247(02)00012-2
Article
Google Scholar
Rao MP, Aimi MF, MacDonald NC: Single-mask, three-dimensional microfabrication of high-aspect-ratio structures in bulk silicon using reactive ion etching lag and sacrificial oxidation. Appl Phys Lett 2004, 85: 6281–6283. http://dx.doi.org/10.1063/1.1834720 10.1063/1.1834720
Article
Google Scholar
Lee S, Park S, Cho D: The surface/bulk micromachining (SBM) process: a new method for fabricating released microelectromechanical systems in single crystal silicon. J Microelectromech Syst 1999, 8: 409–416. 10.1109/84.809055
Article
Google Scholar
Chu HY, Fang W: A vertical convex corner compensation and non {111}crystal planes protection for wet anisotropic bulk micromachining process. J Micromech Microeng 2004, 14: 806–813. 10.1088/0960-1317/14/6/007
Article
Google Scholar
Zubel I, Kramkowska M: Possibilities of extension of 3D shapes by bulk micromachining of different Si ( h k l ) substrates. J Micromech Microeng 2005, 15: 485–493. 10.1088/0960-1317/15/3/008
Article
Google Scholar
Yang EH, Yang SS, Han SW, Kim SY: Fabrication and dynamic testing of electrostatic actuators with p+ silicon diaphragms. Sens Actuators 2005, A50: 151–156. 10.1016/0924-4247(96)80100-2
Google Scholar
Gianchandani YB, Najafi K: A bulk silicon dissolved wafer process for microelectromechanical devices. J Microelectromech Syst 1992, 1: 77–85. 10.1109/84.157361
Article
Google Scholar
Pal P, Sato K: Complex three dimensional structures in Si{100} using wet bulk micromachining. J Micromech Microeng 2009, 19: 105008 (9pp). 10.1088/0960-1317/19/10/105008
Google Scholar
Pal P, Sato K, Chandra S: Fabrication techniques of convex corners in a (100)-silicon wafer using bulk micromachining: A review. J Micromech Microeng 2007, 17: R111-R133. 10.1088/0960-1317/17/10/R01
Article
Google Scholar
Trieu HK, Mokwa W: A generalized model describing corner undercutting by the experimental analysis of TMAH/IPA. J Micromech Microeng 1998, 8: 80–83. 10.1088/0960-1317/8/2/009
Article
Google Scholar
Jia C, Dong W, Liu C, Zhang X, Zhou J, Zhong Z, Xue H, Zang H, Xu B, Chen W: Convex corners undercutting and rhombus compensation in KOH with and without IPA solution on (110) silicon. Microelectronics J 2006, 37: 1297–1301. 10.1016/j.mejo.2006.07.008
Article
Google Scholar
Kim B, Cho DD: Aqueous KOH etching of silicon (110) etch characteristics and compensation methods for convex corners. J Electrochem Soc 1998,145(7):2499–2508. 10.1149/1.1838668
Article
Google Scholar
Dong W, Zhang X, Liu C, Li M, Xu B, Chen W: Mechanism for convex corner undercutting of (110) silicon in KOH. Microelectronics J 2004, 35: 417–419. http://dx.doi.org/10.1016/j.mejo.2004.01.005 10.1016/j.mejo.2004.01.005
Article
Google Scholar
Yang CR, Chen PY, Yang CH, Chiou YC, Lee RT: Effects of various ion-typed surfactants on silicon anisotropic etching properties in KOH and TMAH solutions. Sens Actuators 2005, A15: 271–281. 10.1016/j.sna.2004.09.017
Article
Google Scholar
Sekimura M: Anisotropic etching of surfactant-added TMAH solution. In Proc. 12th IEEE Micro-Electro-Mech. Syst. Conf. Orlando, Florida; 1999:650–655. 10.1109/MEMSYS.1999.746904
Google Scholar
Gosálvez MA, Tang B, Pal P, Sato K, Kimura Y, Ishibashi K: Orientation and concentration dependent surfactant adsorption on silicon in aqueous alkaline solutions: explaining the changes in the etch rate, roughness and undercutting for MEMS applications. J Micromech Microeng 2009, 19: 125011 (18pp). http://www.sciencedirect.com/science/article/pii/S0924424700003174
Google Scholar
Tang B, Pal P, Gosalvez MA, Shikida M, Sato K, Amakawa H, Itoh S: Ellipsometry study of the adsorbed surfactant thickness on Si{110} and Si{100} and the effect of pre-adsorbed surfactant layer on etching characteristics in TMAH. Sens Actuators 2009, A156: 334–341. 10.1016/j.sna.2009.10.017
Article
Google Scholar
Resnik D, Vrtacnik D, Aljancic U, Mozek M, Amon S: The role of Triton surfactant in anisotropic etching of {110} reflective planes on (100) silicon. J Micromech Microeng 2005, 15: 1174–1183. 10.1088/0960-1317/15/6/007
Article
Google Scholar
Sarro PM, Brida D, van der Vlist W, Brida S: Effect of surfactant on surface quality of silicon microstructures etched in saturated TMAHW solutions. Sens Actuators A 2000, 85: 340–345. -4 http://dx.doi.org/10.1016/S0924–4247(00)00317 10.1016/S0924-4247(00)00317-4
Article
Google Scholar
Pal P, Sato K, Gosalvez MA, Kimura Y, Ishibashi K, Niwano M, Hida H, Tang B, Itoh S: Surfactant adsorption on single crystal silicon surfaces in TMAH solution: orientation-dependent adsorption detected by In-situ Infra-Red spectroscopy. J Microelectromech Syst 2009, 18: 1345–1356. 10.1109/JMEMS.2009.2031688
Article
Google Scholar
Pal P, Sato K, Gosalvez MA: Etched profile control in anisotropic etching of silicon by TMAH+Triton. J Micromech Microeng 2012,22(6):065013 (9pp). 10.1088/0960-1317/22/6/065013
Google Scholar
Chahoud M, Wehmann HH, Schlachetzki A: Etching simulation of convex and mixed InP and Si structures. Sens Actuators 1998, A69: 251–258. http://www.sciencedirect.com/science/article/pii/S0924424702000171
Article
Google Scholar
Schroder H, Obermeier E: A new model for Si
{100}
convex corner undercutting in anisotropic KOH etching. J Micromech Microeng 2000, 10: 163–170. 10.1088/0960-1317/10/2/311
Article
Google Scholar
Shikida M, Nanbara K, Koizumi T, Sasaki H, Sato K, Odagaki M, Ando M, Furuta S, Asaumi K: A model explaining mask-corner undercut phenomena in anisotropic silicon etching: a saddle point in the etching-rate diagram. Sens Actuators A 2002, 97–98: 758–763. -1 http://dx.doi.org/10.1016/S0924–4247(02)00017
Article
Google Scholar
Chang Chien WT, Chang CO, Lo YC, Li ZW, Chou CS: On the Miller-indices determination of Si
{100}
convex corner undercut planes. J Micromech Microeng 2005, 15: 833–842. 10.1088/0960-1317/15/4/022
Article
Google Scholar
Tiberg F: Physical characterization of non-ionic surfactant layers adsorbed at hydrophilic and hydrophobic solid surfaces by time-resolved ellipsometry. J Chem Soc Faraday Trans 1996, 92: 531–538. 10.1039/FT9969200531
Article
Google Scholar