Fig. 2From: Realization of large-scale sub-10 nm nanogratings using a repetitive wet-chemical oxidation and etching techniqueMeasurement of silicon oxide thickness. a Silicon oxide thickness with respect to oxidation time, measured by ellipsometer, with an extended line at 1.8 nm. b A high resolution TEM image (×790,000) of the Si/SiO2 interfaceBack to article page