Fig. 4

a Tilted SEM image of HF defect for 23 nm Cz-SOI wafer. Reprinted from [60] with permission from Elsevier. b Optical image of the Secco defects on the SOI wafer. c Sketch of the defect delineation process in SOI: (left) initial position of the defect; (center) preferential etching at the defect site by the defect etching solution; (right) following immersion in HF, dissolution of the BOX beneath the defect. Reprinted from [61] with permission from Elsevier. d Schematic configuration for: (left) pseudo-MOSFET, (center) Hall effect and (right) 4-point probe. Reprinted from [62] with permission from Elsevier