Fig. 8From: High speed silicon wet anisotropic etching for applications in bulk micromachining: a reviewAFM images of Si{100} surface etched in 2 M KOH solution at 60 ℃ for 60 min under three different conditions: a solution saturated with Ar gas, b ultrasonic agitation applied to the solution (a), c solution saturated with O2 gas [80], © 1997 IOP PublishingBack to article page