Fig. 2From: Determination of precise crystallographic directions on Si{111} wafers using self-aligning pre-etched patternSchematic representation of the wet anisotropically etched profiles of different shapes mask geometries on Si{111} wafer: a mask pattern on wafer surface, b etched profile after wet anisotropic etching, and c cross sectional view of etched profiles. Dashed lines in a indicate the directions where wet etch will terminate due to the appearance of {111} planesBack to article page