Fig. 7From: Etching characteristics of Si{110} in 20 wt% KOH with addition of hydroxylamine for the fabrication of bulk micromachined MEMSSilicon dioxide cantilever beam fabricated in NH2OH-added KOH solution: a patterning of oxide layer using photolithography and oxide etching, b optical image of cantilever beam patterned in oxide layer, c wet anisotropic etching to release the beam, d optical and e SEM images of released cantileversBack to article page