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Micro and Nano Systems Letters
Fig. 4 | Micro and Nano Systems Letters

Fig. 4

From: Determination of precise crystallographic directions for mask alignment in wet bulk micromachining for MEMS

Fig. 4

Effect of the misalignment of mask edges on the etched profile on Si{100} wafer: a channel (or rectangular opening) patterned using the wafer flat as the reference ⟨110⟩ directions. Etched profile of the channel when the mask edges are b accurately and c inaccurately oriented along ⟨110⟩ directions. In the case of accurate alignment, the etched channel is dimensionally accurate without any undercutting, while undercutting occurs if the mask edges are misaligned

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