Table 1 Standard DRIE recipe
From: Optimization of deep reactive ion etching for microscale silicon hole arrays with high aspect ratio
Passivation | Depassivation | Etch | |
|---|---|---|---|
Process time (sec) | 2.0 | 2.0 | 1.5 |
ICP power (W) | 1500 | 1500 | 1200 |
Bias voltage (V) | 10 | 400 | 10 |
Pressure (mTorr) | 25 | 25 | 20 |
C\(_{4}\)F\(_{8}\) (sccm) | 60 | 0 | 0 |
SF\(_{6}\) (sccm) | 0 | 150 | 100 |
Ar (sccm) | 30 | 30 | 30 |