Fig. 3
From: Optimization of deep reactive ion etching for microscale silicon hole arrays with high aspect ratio
SEM cross-sectional images of 1.6 μm-diameter hole arrays etched 200 cycles by modified DRIE recipe with bias voltage of a 10 V and b 300 V. c Area reduction ratio and etch depth as a function of bias voltage. SEM cross-sectional images of 1.5-μm diameter hole arrays etched 200 cycles by modified DRIE recipe with ICP power of d 1200 W and e 1500 W. f Area reduction ratio and etch depth as a function of ICP power. All scale bars are 10 μm