Fig. 14From: High speed silicon wet anisotropic etching for applications in bulk micromachining: a reviewEtch rate of Si{100} quickly decayed depending on time delay for introducing a microwave-irradiated solution to the etching chamber of E2MSi. Etch rates are compared between time delay of 3 s and 10 s [84], © 2004, ElsevierBack to article page