Fig. 3From: Realization of large-scale sub-10 nm nanogratings using a repetitive wet-chemical oxidation and etching techniqueAFM data confirming etch-depth and roughness after the oxidation and etching cycles. a Schematic of the process in a flat silicon substrate to be analyzed by AFM. b Etch depth means the difference in height between the surface of the initial flat substrate and the surface of the etched silicon, according to the number of oxidation and etching cycles (Additional file 1). c AFM topographical images, before and after 20 cycles. Roughness is the root mean square of the surfaceBack to article page