Fig. 13From: Determination of precise crystallographic directions for mask alignment in wet bulk micromachining for MEMSReprinted from [107], © 2005 Springer, reproduced with permissionSchematic representation of the technique using pre-etched pattern with tapered ridges as proposed by Chang and Huang: a A part of the patterned structures, b etched profile on Si{100}, c the entire etched patterns on Si{100}, d etched profile on Si{110} [107]. The index of ridge with D = 0 (indexed by T and Tʹ) on both sides of the reference line is used to determine the misalignmentBack to article page