Table 1 Comparison of key features
Parameter | Ref. [5] | Ref. [6] | This paper |
|---|---|---|---|
Frequency (GHz) | 50 | 2 | 0–3 |
Pull-in Voltage | 4.5 | 15 | 0.5 |
Displacement (μm) | 1.5 | 1.3 | 1.5 |
Transition Time | 120 ns | 7.4 μs | 0.5 ms |
Isolation (dB) | 55 | 45.7 | 27 |
Insertion loss (dB) | 0.5 | 0.25 | 0.1 |
Return loss (dB) | 12.4 | NA | 20 |
1 V CMOS technology | No | No | Yes |
Life Cycle | 8 × 108 | 1 × 107 | 1 × 104 |
Size | 400 × 100 μm2 | 2000 × 1000 μm2 | 1264 × 635 μm2 |
(Lower contact pad) | (SPDT) | (Including biasing pads) |