Fig. 4From: Optimization of deep reactive ion etching for microscale silicon hole arrays with high aspect ratioSEM cross-sectional images of 1.6 μm-diameter hole arrays etched 200 cycles by modified DRIE recipe with C\(_{4}\)F\(_{8}\) gas flow rate of a 60 sccm and b 70 sccm. c Area reduction ratio and etch depth as a function of C\(_{4}\)F\(_{8}\) gas flow rate. SEM cross-sectional images of 1.6 μm-diameter hole arrays etched 200 cycles by modified DRIE recipe with SF\(_{6}\) gas flow rate of d 120 sccm and e 150 sccm. f Area reduction ratio and etch depth as a function of SF\(_{6}\) gas flow rate. All scale bars are 10 μmBack to article page