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Fig. 4 | Micro and Nano Systems Letters

Fig. 4

From: Optimization of deep reactive ion etching for microscale silicon hole arrays with high aspect ratio

Fig. 4

SEM cross-sectional images of 1.6 μm-diameter hole arrays etched 200 cycles by modified DRIE recipe with C\(_{4}\)F\(_{8}\) gas flow rate of a 60 sccm and b 70 sccm. c Area reduction ratio and etch depth as a function of C\(_{4}\)F\(_{8}\) gas flow rate. SEM cross-sectional images of 1.6 μm-diameter hole arrays etched 200 cycles by modified DRIE recipe with SF\(_{6}\) gas flow rate of d 120 sccm and e 150 sccm. f Area reduction ratio and etch depth as a function of SF\(_{6}\) gas flow rate. All scale bars are 10 μm

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