Table 4 The effect of various kinds of additives on etched surface roughness of silicon in TMAH solution
From: High speed silicon wet anisotropic etching for applications in bulk micromachining: a review
Authors | Additive’s name | Orientation of silicon | TMAH Conc | Temp. (°C) | Surface roughness |
|---|---|---|---|---|---|
C-R Yang et al. [56] | Anionic sodium dihexyl sulfosuccinate (SDSS) | {100} | 10 wt.% | 60–100 | Increase |
G Yan et al. [106] | Ammonium persulfate (AP) | {100} | 5, 10 wt% | 85 | Decrease |
N Fujitsuka et al. [108] | Ammonium persulfate (AP) | {100} | 10 wt.% | 80 | Decrease |
K-H Jun et.al [109] | Pyrazine, Ammonium persulfate (AP) | {100} | 10 wt% | 70 | Decrease |
S. Birda et al. [107] | Ammonium persulfate (AP) | {100} | 5–10 wt.% | 70–90 | Decrease |
E.H. Klaassen et al. [111] | Ammonium peroxydisulfate | {100} | 5 wt.% | 70–100 | Not reported |
R. Sotoaka [55] | Maltose, Glucose, NH2OH, Cellobiose | {100} | 10 wt% | 80 | Not reported |
NH2OH | {100}, {110} and {111} | 5 wt% | 70 | Surface roughness of {100} decreases significantly, while {110} and {111} are not affected considerably |