Table 3 The effect of various kinds of additives on the etch rate of silicon in KOH solution

C. Moldovan et al. [52]

Redox system

{100}

4 M

80

Mild increase

Ether crown complexant

{100}

4.5 M

80

Mild increase

Calix[4]arene complexant

{100}

4.5 M

80

Effective increase

C-R Yang et al. [56]

Anionic sodium dihexyl sulfosuccinate (SDSS)

{100}

30 wt%

60–100

Effective increase at 100 °C

R. Sotoaka [55]

Maltose, Glucose, NH₂OH, Cellobiose

{100}

25 wt%

80

Significant increase in NH₂OH added solution

A. V. Narasimha Rao et al. [51, 63,64,65]

NH₂OH

{100}, {110} and {111}

20 wt%

75

Significant increase