Fig. 37
From: High speed silicon wet anisotropic etching for applications in bulk micromachining: a review
SEM photographs of etched Si{100} in 3.2 wt.% Si dissolving 10 wt.% TMAH at 80 °C with addition of a 0 wt%, b 0.2 wt%, c 0.4 wt%, d 0.6 wt%, e 0.8 wt%, f 1.0 wt%, g 1.2 wt%, ammonium persulfate (AP) [108], © 2004, Elsevier