Fig. 34
From: High speed silicon wet anisotropic etching for applications in bulk micromachining: a review
Surface roughness of Si{100} etched in 4.5 M KOH + redox system + complexant at 80 °C: a calix[4]arene complexant; b ether crown complexant; c simple 4.5 M KOH [52], © 1999, Elsevier