Fig. 19From: High speed silicon wet anisotropic etching for applications in bulk micromachining: a reviewOptical microscope images of deeply etched (230–280 μm deep) Si{110} surfaces using 45 wt% KOH solution at a 115 °C, b 125 °C, c 130 °C, d 135 °C. A smooth surface without hillocks is obtained at 135 °C [18], © 2004, ElsevierBack to article page