Device Structure | Deposition technique of BFO active layer | Device configuration | Photo responsivity (A/W) | Rise time | Fall time | Working mechanism | Refs |
---|---|---|---|---|---|---|---|
ITO/ZnO/BFO/PEDOT:PSS | Spin coating | Metal/semiconductor/ferroelectric/metal | 0.04 | 9 s | 6 s | Formation of the depletion region at the ferroelectric/semiconductor junction and the role of n + /n BFO junction in the detection of white light was investigated | [13] |
ITO/BFO/Ag | Hydrothermal and post-sintering process | Metal/ferroelectric/metal | 0.6 × 10–3 | 10 s | 0.6 s | Thermo-phototronic effect induced electron transfer in the BFO film for the detection of UV radiation (λ = 365 nm) | [45] |
Ag/CH3NH3PbI3/BiFeO3/ITO | Spin coating | Metal/organic semiconductor/ferroelectric/metal | 2 | 0.74 s | 0.08 s | Formation of CH3NH3PbI3/BiFeO3 heterojunction for infrared photodetector (λ = 800 nm) | [46] |
BFO/LaAlO3/(La,Sr)MnO3 | PLD | Ferroelectric/metal | 1.8 × 103 | 6.97 ms | 1.27 ms | Role of charged domain walls (CDWs) confined in (BFO) nanoislands for detection of visible-infrared spectrum | [6] |
Pt/BFO | PLD | Metal/ Ferroelectric | - | 25 s | 19 s | Role of in-plane platinum (Pt) electrode configuration for light detection using Halogen source | [47] |
ITO/BFO/Al | Spray pyrolysis | Metal/ferroelectric/metal | 110 | 6 s | 17 s | Oxygen adsorption/desorption process upon the surface of BFO and thickness dependence characteristics of the BFO layer towards UV photodetection were analyzed | Present work |