|
ITO/ZnO/BFO/PEDOT:PSS
|
Spin coating
|
Metal/semiconductor/ferroelectric/metal
|
0.04
|
9 s
|
6 s
|
Formation of the depletion region at the ferroelectric/semiconductor junction and the role of n + /n BFO junction in the detection of white light was investigated
|
[13]
|
|
ITO/BFO/Ag
|
Hydrothermal and post-sintering process
|
Metal/ferroelectric/metal
|
0.6 × 10–3
|
10 s
|
0.6 s
|
Thermo-phototronic effect induced electron transfer in the BFO film for the detection of UV radiation (λ = 365 nm)
|
[45]
|
|
Ag/CH3NH3PbI3/BiFeO3/ITO
|
Spin coating
|
Metal/organic semiconductor/ferroelectric/metal
|
2
|
0.74 s
|
0.08 s
|
Formation of CH3NH3PbI3/BiFeO3 heterojunction for infrared photodetector (λ = 800 nm)
|
[46]
|
|
BFO/LaAlO3/(La,Sr)MnO3
|
PLD
|
Ferroelectric/metal
|
1.8 × 103
|
6.97 ms
|
1.27 ms
|
Role of charged domain walls (CDWs) confined in (BFO) nanoislands for detection of visible-infrared spectrum
|
[6]
|
|
Pt/BFO
|
PLD
|
Metal/ Ferroelectric
|
-
|
25 s
|
19 s
|
Role of in-plane platinum (Pt) electrode configuration for light detection using Halogen source
|
[47]
|
|
ITO/BFO/Al
|
Spray pyrolysis
|
Metal/ferroelectric/metal
|
110
|
6 s
|
17 s
|
Oxygen adsorption/desorption process upon the surface of BFO and thickness dependence characteristics of the BFO layer towards UV photodetection were analyzed
|
Present work
|
