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Table 2 UV photoresponse properties of the fabricated ITO/BFO/Al photodetector in comparison with the earlier reports on BFO-based photodetectors

From: Study on thickness-dependence characteristics of bismuth ferrite (BFO) for ultraviolet (UV) photodetector application

Device Structure

Deposition technique of BFO active layer

Device configuration

Photo responsivity (A/W)

Rise time

Fall time

Working mechanism

Refs

ITO/ZnO/BFO/PEDOT:PSS

Spin coating

Metal/semiconductor/ferroelectric/metal

0.04

9 s

6 s

Formation of the depletion region at the ferroelectric/semiconductor junction and the role of n + /n BFO junction in the detection of white light was investigated

[13]

ITO/BFO/Ag

Hydrothermal and post-sintering process

Metal/ferroelectric/metal

0.6 × 10–3

10 s

0.6 s

Thermo-phototronic effect induced electron transfer in the BFO film for the detection of UV radiation (λ = 365 nm)

[45]

Ag/CH3NH3PbI3/BiFeO3/ITO

Spin coating

Metal/organic semiconductor/ferroelectric/metal

2

0.74 s

0.08 s

Formation of CH3NH3PbI3/BiFeO3 heterojunction for infrared photodetector (λ = 800 nm)

[46]

BFO/LaAlO3/(La,Sr)MnO3

PLD

Ferroelectric/metal

1.8 × 103

6.97 ms

1.27 ms

Role of charged domain walls (CDWs) confined in (BFO) nanoislands for detection of visible-infrared spectrum

[6]

Pt/BFO

PLD

Metal/ Ferroelectric

-

25 s

19 s

Role of in-plane platinum (Pt) electrode configuration for light detection using Halogen source

[47]

ITO/BFO/Al

Spray pyrolysis

Metal/ferroelectric/metal

110

6 s

17 s

Oxygen adsorption/desorption process upon the surface of BFO and thickness dependence characteristics of the BFO layer towards UV photodetection were analyzed

Present work