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Table 2 UV photoresponse properties of the fabricated ITO/BFO/Al photodetector in comparison with the earlier reports on BFO-based photodetectors

From: Study on thickness-dependence characteristics of bismuth ferrite (BFO) for ultraviolet (UV) photodetector application

Device Structure Deposition technique of BFO active layer Device configuration Photo responsivity (A/W) Rise time Fall time Working mechanism Refs
ITO/ZnO/BFO/PEDOT:PSS Spin coating Metal/semiconductor/ferroelectric/metal 0.04 9 s 6 s Formation of the depletion region at the ferroelectric/semiconductor junction and the role of n + /n BFO junction in the detection of white light was investigated [13]
ITO/BFO/Ag Hydrothermal and post-sintering process Metal/ferroelectric/metal 0.6 × 10–3 10 s 0.6 s Thermo-phototronic effect induced electron transfer in the BFO film for the detection of UV radiation (λ = 365 nm) [45]
Ag/CH3NH3PbI3/BiFeO3/ITO Spin coating Metal/organic semiconductor/ferroelectric/metal 2 0.74 s 0.08 s Formation of CH3NH3PbI3/BiFeO3 heterojunction for infrared photodetector (λ = 800 nm) [46]
BFO/LaAlO3/(La,Sr)MnO3 PLD Ferroelectric/metal 1.8 × 103 6.97 ms 1.27 ms Role of charged domain walls (CDWs) confined in (BFO) nanoislands for detection of visible-infrared spectrum [6]
Pt/BFO PLD Metal/ Ferroelectric - 25 s 19 s Role of in-plane platinum (Pt) electrode configuration for light detection using Halogen source [47]
ITO/BFO/Al Spray pyrolysis Metal/ferroelectric/metal 110 6 s 17 s Oxygen adsorption/desorption process upon the surface of BFO and thickness dependence characteristics of the BFO layer towards UV photodetection were analyzed Present work