From: MEMS particle sensor based on resonant frequency shifting
No | Material deposited from the bottom | (μm) |
---|---|---|
8 | Silicon dioxide, dielectric layer (SiO2) | 0.2 |
7 | Platinum, top electrode (Pt) | 0.2 |
6 | Titanium, adhesion layer (Ti) | < 5 nm |
5 | Aluminum nitride (AlN) | 1.0 |
4 | Platinum, top electrode (Pt) | 0.2 |
3 | Titanium, adhesion layer (Ti) | < 5 nm |
2 | Silicon dioxide, dielectric layer (SiO2) | 0.2 |
1 | Silicon nitride, backside etch stop layer (SiNx) | 1.0 |