Table 1 CMP process conditions of anodically bonded substrate
From: Fracture analysis of anodically bonded silicon substrates during the CMP process
Temperature (°C) | Pout (kPa) | Pin (Pa) | Silicon thickness (μm) | Glass cavity depth (μm) | Glass thickness (μm) |
|---|---|---|---|---|---|
25 | 5.37 | 1.33 | 60 | 30 | 675 |