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Fig. 6 | Micro and Nano Systems Letters

Fig. 6

From: Determination of precise crystallographic directions on Si{111} wafers using self-aligning pre-etched pattern

Fig. 6

A 50 μm wide and 32 mm long rectangular shape mask opening with longer edge aligned along the 〈110〉 direction on {111} wafer surface to test the accuracy of proposed method: a schematic diagram, b optical image of the mask pattern after oxide etching, c etched profile with zoomed-in images of different portions. Pre-etched patterns are used as reference for the precise alignment of the mask edges along 〈110〉 direction. The undercutting at the mask edges takes place due to finite etch rate of {111} plane and the uniform undercutting indicates the accurate alignment of mask edges along 〈110〉 direction

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