Fig. 5From: Determination of precise crystallographic directions on Si{111} wafers using self-aligning pre-etched patternOptical images of the pre-etched pattern on Si{111} surface: a before etching, b after etching, c zoomed-in view to show the perfectly aligned and misaligned notches of hexagon patterns and d zoomed-in view of hexagon structure. The notches of the four radial hexagons align in a straight line along the precise 〈110〉 direction, while the misalignment of notches increases above and below the precise 〈110〉 directionBack to article page