Fig. 3From: Determination of precise crystallographic directions on Si{111} wafers using self-aligning pre-etched patternEffect of misalignment on the size of the structure fabricated using wet anisotropic etching on Si{111} wafer. θ is the misalignment angle of mask edge from 〈110〉 crystallographic direction. Dashed lines indicate the edges of original hexagonal shape mask patternBack to article page