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Fig. 1 | Micro and Nano Systems Letters

Fig. 1

From: Determination of precise crystallographic directions on Si{111} wafers using self-aligning pre-etched pattern

Fig. 1

a Stereographic projection of {111} silicon. The {111} planes projected from the top and bottom hemispheres are shown by solid ( ) and open ( ) circles, respectively. b 〈110〉 directions at which {111} planes appear during wet anisotropic etching process. c Hexagonal contour formed by the intersection of 〈110〉 directions at which {111} planes emerge. d 〈110〉 direction at Si{111} wafer surface with primary flat oriented along 〈110〉 direction. Three {111} planes ( ) are 109.5º to the surface plane and are 60º to each other, while another three {111} planes ( ) are 70.5º to the surface plane and 60º to each other

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