Fig. 6From: Etching characteristics of Si{110} in 20 wt% KOH with addition of hydroxylamine for the fabrication of bulk micromachined MEMSUndercutting at acute and obtuse corners of a rhombus shape structure formed by ⟨112⟩ directions on Si{110} wafer in pure and various concentrations of NH2OH-added 20 wt% KOH solution: undercutting rate (l/t) at a acute and b obtuse corners; undercutting ratio (l/d) at c acute and d obtuse cornersBack to article page