Fig. 6

A typical gating effect of the devices with a highly oriented nanotube bundles [L_c = 10 μm, W_PDMS:\( {\text{W}}_{{{\text{SiO}}_{2} }} \) = 4:1 (2000 nm:500 nm), VDS = −0.1 V]. The inset shows output characteristics of the device, for three gate voltages (VG = −5, −10, and −15 V), measured in steps of 0.5 V. b FET device with Lc of 10 μm, based on SWCNT membrane (VDS: −0.1 V). The device exhibits a turn-off ratio less than ~10