Fig. 5

a Schematic layout of SWCNTs-FET device. b Large-area SEM image of the device with highly oriented nanotube bundles. The inset shows an enlarged view of a unit device. c, d Electrical characteristic of the device with various channel lengths (L_c) and two different pattern geometries: c W_PDMS:\( {\text{W}}_{{{\text{SiO}}_{2} }} \) = 1:4 (500 nm:2000 nm) and d 4:1 (2000 nm:500 nm). Inset AFM images of aligned SWCNTs