Fig. 2From: Fabrication and characterization of monolithic piezoresistive high-g three-axis accelerometerMicrofabrication process flow: a SiO2 growth on SOI wafer. b Patterning and ion implantation to form contact pads and piezoresistors. c SiO2 deposition and via hole patterning. d Al deposition and patterning. e Patterning and sequential etching of top SiO2, device Si layer. f Buried SiO2 from the topside. g Patterning and dry-etching of handle Si layer from the backsideBack to article page