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Fig. 5 | Micro and Nano Systems Letters

Fig. 5

From: Determination of precise crystallographic directions for mask alignment in wet bulk micromachining for MEMS

Fig. 5

Schematic diagram of an array of cantilever beams fabricated when the mask edges are aligned along ⟨110⟩ direction a accurately and b inaccurately. The zoomed view shows that there is no underetching and oversizing (or additional overhang) when the mask is accurately aligned with ⟨110⟩ direction, while additional overhang occurs due to the misalignment of mask patterns. The additional overhanging leads to coupling between adjacent beams

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