Fig. 3From: Determination of precise crystallographic directions for mask alignment in wet bulk micromachining for MEMSEffect of the misalignment of mask edges on the etched profile on Si{110} wafers: a patterning of a channel shape mask design using the wafer flat as the reference ⟨110⟩ direction, b precise alignment of long edges along ⟨112⟩ directions, c misalignment of long edges leading to oversizing of the channelBack to article page