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Fig. 10 | Micro and Nano Systems Letters

Fig. 10

From: Determination of precise crystallographic directions for mask alignment in wet bulk micromachining for MEMS

Fig. 10

Reproduced with permission from [102]. © 1996 IOP Publishing

A technique to determine the ⟨110⟩ direction on Si{100} surface proposed by Vangbo and Backlund exploiting a the symmetric etch rate behaviour across the ⟨110⟩ direction, and b the etched patterns comprising of ridges with tapered edges [102]. The set of ridges with symmetric undercutting constitutes the precise ⟨110⟩ direction

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