Fig. 10From: Determination of precise crystallographic directions for mask alignment in wet bulk micromachining for MEMSReproduced with permission from [102]. © 1996 IOP PublishingA technique to determine the ⟨110⟩ direction on Si{100} surface proposed by Vangbo and Backlund exploiting a the symmetric etch rate behaviour across the ⟨110⟩ direction, and b the etched patterns comprising of ridges with tapered edges [102]. The set of ridges with symmetric undercutting constitutes the precise ⟨110⟩ directionBack to article page