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Table 1 Different growth parameters, with high and low levels, used during the VLS growth of ZnO nanowires

From: The influence of resistance and carrier concentration on the output voltage of a ZnO nanogenerator

Parameter

Low level

High level

Growth time (minutes)

5

30

Growth temperature (°C)

500

1200

Initial pressure (mTorr)

200

2 000

Growth pressure (mTorr)

500

1500

Source powder (grams)

1

3

Argon flow rate (sccm)

20

120