From: The influence of resistance and carrier concentration on the output voltage of a ZnO nanogenerator
Parameter | Low level | High level |
---|---|---|
Growth time (minutes) | 5 | 30 |
Growth temperature (°C) | 500 | 1200 |
Initial pressure (mTorr) | 200 | 2 000 |
Growth pressure (mTorr) | 500 | 1500 |
Source powder (grams) | 1 | 3 |
Argon flow rate (sccm) | 20 | 120 |