Skip to main content

Table 1 Different growth parameters, with high and low levels, used during the VLS growth of ZnO nanowires

From: The influence of resistance and carrier concentration on the output voltage of a ZnO nanogenerator

Parameter Low level High level
Growth time (minutes) 5 30
Growth temperature (°C) 500 1200
Initial pressure (mTorr) 200 2 000
Growth pressure (mTorr) 500 1500
Source powder (grams) 1 3
Argon flow rate (sccm) 20 120